InterFET N0042Y
The InterFET N0042Y Geometry is targeted for high voltage applications. The low input capacitance makes it ideal for higher frequency applications.| Part No. | N0042Y |
|---|---|
| Datasheet | N0042Y Download |
| Manufacturer |  InterFET |
| Description | Process Geometry |
| Buy | Stock & Price |
FEATURES
● Typical Input Capacitance: 6pF● High Breakdown Voltage: -400V Typical
● Small Die: 746um X 746um X 203um
● Bond Pads: 95um Diameter
● Substrate Connected to Gate
● Au Back-Side Finish
APPLICATIONS
● General Purpose Amplifier● High Breakdown Voltage
● Custom Part Options
DESCRIPTION
Geometry Top View S 42 D S Standard Parts● IFN6449, IFN6450 Product Summary Parameters BVGSS Gate to Source Breakdown Voltage IDSS Drain to Source Saturation Current VGS(off) Gate to Source Cutoff Voltage GFS Forward Transconductance Min Typ Max Unit -300 -400 V 2 10 mA -2 -12 V 0.8 mS
MAXIMUM RATINGS
(@ TA = 25°C, Unless otherwise specified) Parameters Min Typ Max Unit VRGS Reverse Gate to Source or Drain Voltage -300 -400 V IFG Continuous Forward Gate Current 10 mA TJ Operating Junction Temperature -55 150 °C TSTG Storage Temperature -65 175 °C Disclaimer: It is the Buyers responsibility for designing, validating and testing the end application under all field use cases and extreme use conditions.
