• Part: N0042Y
  • Description: Process Geometry
  • Manufacturer: InterFET
  • Size: 870.35 KB
Download N0042Y Datasheet PDF
InterFET
N0042Y
Features - Typical Input Capacitance: 6p F - High Breakdown Voltage: -400V Typical - Small Die: 746um X 746um X 203um - Bond Pads: 95um Diameter - Substrate Connected to Gate - Au Back-Side Finish Applications - General Purpose Amplifier - High Breakdown Voltage - Custom Part Options Description The Inter FET N0042Y Geometry is targeted for high voltage applications. The low input capacitance makes it ideal for higher frequency applications. Geometry Top View Standard Parts - IFN6449, IFN6450 Product Summary Parameters BVGSS Gate to Source Breakdown Voltage IDSS Drain to Source Saturation Current VGS(off) Gate to Source Cutoff Voltage Forward Transconductance Min Typ Max Unit -300 -400 10 m A -2 -12 0.8 m S Maximum Ratings (@ TA = 25°C, Unless otherwise specified) Parameters Min...