N0042Y
Features
- Typical Input Capacitance: 6p F
- High Breakdown Voltage: -400V Typical
- Small Die: 746um X 746um X 203um
- Bond Pads: 95um Diameter
- Substrate Connected to Gate
- Au Back-Side Finish
Applications
- General Purpose Amplifier
- High Breakdown Voltage
- Custom Part Options
Description
The Inter FET N0042Y Geometry is targeted for high voltage applications. The low input capacitance makes it ideal for higher frequency applications.
Geometry Top View
Standard Parts
- IFN6449, IFN6450
Product Summary
Parameters
BVGSS Gate to Source Breakdown Voltage
IDSS Drain to Source Saturation Current
VGS(off) Gate to Source Cutoff Voltage
Forward Transconductance
Min
Typ
Max
Unit
-300
-400
10 m A
-2
-12
0.8 m S
Maximum Ratings (@ TA = 25°C, Unless otherwise specified)
Parameters
Min...