N0072S
Features
- Low Noise: 2.0 n V/√Hz Typical
- Typical Input Capacitance: 6.5p F
- Typical Breakdown Voltage: -45V
- Small Die: 467um X 467um X 203um
- Bond Pads: 90um X 90um
- Substrate Connected to Gate
- Au Back-Side Finish
Applications
- Low Noise Amplifier
- Audio Amplifiers
- Matched Pair Applications
- Custom Part Options
Description
The Inter FET N0072S Geometry is ideal for low noise audio and matched pair applications. Similar features to the N0072L Geometry with higher breakdown voltage.
Geometry Top View
S-D
S-D
Test
Pattern
Standard Parts
- IFN5564, IFN5565, IFN5566
- J308, J309, J310
- U308, U309
- VCR2N
Product Summary
Parameters
BVGSS Gate to Source Breakdown Voltage
IDSS Drain to Source Saturation Current
VGS(off) Gate to Source Cutoff Voltage
Forward Transconductance
Min
Typ
Max
Unit
-30
-45...
