Full PDF Text Transcription for N0072S (Reference)
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N0072S. For precise diagrams, and layout, please refer to the original PDF.
InterFET Product Folder Technical Support Order Now N0072S N0072S Process Geometry Features • Low Noise: 2.0 nV/√Hz Typical • Typical Input Capacitance: 6.5pF • Typical B...
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ise: 2.0 nV/√Hz Typical • Typical Input Capacitance: 6.5pF • Typical Breakdown Voltage: -45V • Small Die: 467um X 467um X 203um • Bond Pads: 90um X 90um • Substrate Connected to Gate • Au Back-Side Finish Applications • Low Noise Amplifier • Audio Amplifiers • Matched Pair Applications • Custom Part Options Description The InterFET N0072S Geometry is ideal for low noise audio and matched pair applications. Similar features to the N0072L Geometry with higher breakdown voltage.
N0072S Datasheet
