N0903L - Process Geometry

InterFET

General Description

The InterFET N0903L Geometry is ideal for low noise high gain applications.

IF9030 IFN5432, IFN5433, IFN5434 Product Summary Parameters BVGSS Gate to Source Breakdown Voltage IDSS Drain to Source

Key Features

Low Noise: 0.7 nV/√Hz Typical.
Typical Input Capacitance: 50pF.
Typical Breakdown Voltage: -30V.
High Input Impedance.
Die Size: 975um X 975um X 203um.
Bond Pads: 90um X 90um.
Substrate Connected to Gate.
Au Back-Side Finish.

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N0903L process geometry by InterFET - Datasheet Preview

Datasheet Details

Part number	N0903L
Manufacturer	InterFET
File Size	858.21 KB
Description	Process Geometry
Datasheet	N0903L Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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InterFET Product Folder Technical Support Order Now N0903L N0903L Process Geometry Features • Low Noise: 0.7 nV/√Hz Typical • Typical Input Capacitance: 50pF • Typical Breakdown Voltage: -30V • High Input Impedance • Die Size: 975um X 975um X 203um • Bond Pads: 90um X 90um • Substrate Connected to Gate • Au Back-Side Finish Applications • Low Noise Amplifier • Audio Amplifiers • Matched Pair Applications • Custom Part Options Description The InterFET N0903L Geometry is ideal for low noise high gain applications.