InterFET N0903L
The InterFET N0903L Geometry is ideal for low noise high gain applications.| Part No. | N0903L |
|---|---|
| Datasheet | N0903L Download |
| Manufacturer |  InterFET |
| Description | Process Geometry |
| Buy | Stock & Price |
FEATURES
● Low Noise: 0.7 nV/√Hz Typical● Typical Input Capacitance: 50pF
● Typical Breakdown Voltage: -30V
● High Input Impedance
● Die Size: 975um X 975um X 203um
● Bond Pads: 90um X 90um
● Substrate Connected to Gate
● Au Back-Side Finish
APPLICATIONS
● Low Noise Amplifier● Audio Amplifiers
● Matched Pair
APPLICATIONS
● Custom Part OptionsDESCRIPTION
Geometry Top View 903 G S-D D-S S-D D-S G Test Pattern Standard Parts● IF9030
● IFN5432, IFN5433, IFN5434 Product Summary Parameters BVGSS Gate to Source Breakdown Voltage IDSS Drain to Source Saturation Current VGS(off) Gate to Source Cutoff Voltage GFS Forward Transconductance Min Typ Max Unit -25 -30 V 10 500 mA -0.3 -3 V 250 mS
MAXIMUM RATINGS
(@ TA = 25°C, Unless otherwise specified) Parameters Min Typ Max Unit VRGS Reverse Gate to Source or Drain Voltage -20 -30 V IFG Continuous Forward Gate Current 10 mA TJ Operating Junction Temperature -55 150 °C TSTG Storage Temperature -65 175 °C Disclaimer: It is the Buyers responsibility for designing, validating and testing the end application under all field use cases and extreme use conditions.
