N3600L
N3600L is Process Geometry manufactured by InterFET.
InterFET
Product Folder
Technical Support
Order Now
N3600L Process Geometry
Features
- Low Noise: 0.5 nV/√Hz Typical
- Typical Breakdown Voltage: -22V
- Low On Resistance: 2.0Ω Typical
- Die Size: 1838um X 1838um X 203um
- Oversized Bond Pads
- Substrate Connected to Gate
- Au Back-Side Finish
Applications
- Large Capacitance Detector Pre-Amplifier
- Matched Pair Applications
- Custom Part Options
Description
The InterFET N3600L Geometry is ideal for low noise high gain applications.
Geometry Top View
S-D
S-D S-D G
G D-S D-S
D-S
Standard Parts
- IF3601
- IF3602
Product Summary
Parameters
BVGSS Gate to Source Breakdown...
