N3600L Overview
The InterFET N3600L Geometry is ideal for low noise high gain applications. It is the Buyers responsibility for designing, validating and testing the end application under all field use cases and extreme use conditions. Guaranteeing the application meets required standards, regulatory pliance, and all safety and security requirements is the responsibility of the Buyer.
N3600L Key Features
- Low Noise: 0.5 nV/√Hz Typical
- Typical Breakdown Voltage: -22V
- Low On Resistance: 2.0Ω Typical
- Die Size: 1838um X 1838um X 203um
- Oversized Bond Pads
- Substrate Connected to Gate
- Au Back-Side Finish