N3600L - Process Geometry

Description

The InterFET N3600L Geometry is ideal for low noise high gain applications.

IF3601 IF3602 Product Summary Parameters BVGSS Gate to Source Breakdown Voltage IDSS Drain to Source Saturation Current VGS(of

Features

Low Noise: 0.5 nV/√Hz Typical.
Typical Breakdown Voltage: -22V.
Low On Resistance: 2.0Ω Typical.
Die Size: 1838um X 1838um X 203um.
Oversized Bond Pads.
Substrate Connected to Gate.
Au Back-Side Finish.

InterFET

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Datasheet Details

Part number	N3600L
Manufacturer	InterFET
File Size	854.11 KB
Description	Process Geometry
Datasheet	N3600L Datasheet
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InterFET Product Folder Technical Support Order Now N3600L N3600L Process Geometry Features • Low Noise: 0.5 nV/√Hz Typical • Typical Breakdown Voltage: -22V • Low On Resistance: 2.0Ω Typical • Die Size: 1838um X 1838um X 203um • Oversized Bond Pads • Substrate Connected to Gate • Au Back-Side Finish Applications • Large Capacitance Detector Pre-Amplifier • Matched Pair Applications • Custom Part Options Description The InterFET N3600L Geometry is ideal for low noise high gain applications.

Published: Jun 13, 2020 |