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NJ30L - Silicon Junction Field-Effect Transistor Low-Noise High Gain Amplifier

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Datasheet Details

Part number NJ30L
Manufacturer InterFET
File Size 149.81 KB
Description Silicon Junction Field-Effect Transistor Low-Noise High Gain Amplifier
Datasheet download datasheet NJ30L Datasheet
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F-16 01/99 NJ30L Process Silicon Junction Field-Effect Transistor ¥ Low-Noise, High Gain Amplifier Absolute maximum ratings at TA = 25¡C Gate Current, Ig Operating Junction Temperature, Tj Storage Temperature, Ts 10 mA +150°C – 65°C to +175°C G S-D S-D G Die Size = 0.016" X 0.016" All Round Bond Pads = 0.0028" All Square Bond Pads = 0.004" Substrate is also Gate. Devices in this Databook based on the NJ30L Process. Datasheet 2N5911, 2N5912 IFN5911, IFN5912 SMP5911 SMP5912 www.DataSheet4U.
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