InterFET NJ3600L
Silicon Junction Field-Effect Transistor Large Capacitance Detector Pre-Amplifier
| Part No. | NJ3600L |
|---|---|
| Datasheet | NJ3600L Download |
| Manufacturer |  InterFET |
| Description | Silicon Junction Field-Effect Transistor Large Capacitance Detector Pre-Amplifier |
| Buy | Stock & Price |
ELECTRICAL CHARACTERISTICS
Gate Source Breakdown Voltage Reverse Gate Leakage Current Drain Saturation Current (Pulsed) Gate Source Cutoff Voltage DynamicELECTRICAL CHARACTERISTICS
Drain Source ON Resistance Forward Transconductance (Pulsed) Input Capacitance Feedback Capacitance Equivalent Noise Voltage rds(on) gfs Ciss Crss e ¯N 1 750 650 80 0.35 4 Ω mS pF pF V(BR)GSS IGSS IDSS VGS(OFF) 50 – 0.5 Min – 15 Typ – 22 100 1000 1000 –3 Max Unit V pA mA V NJ3600L Process Test Conditions IG = 1 µA, VDS = ØV VGS = 10V, VDS = ØV VDS = 10V, VGS = ØV VDS = 10V, ID = 1 nA ID = 1 mA, VGS = ØV VDS = 10V, VGS = ØV VDS = 10V, VGS = ØV VDS = 10V, VGS = ØV f = 1 kHz f = 1 kHz f = 1 kHz f = 1 kHz f = 30 Hz nV/√HZ VDG = 3V, ID = 5 mA 1000 N. Shiloh Road, Garland, TX 75042 (972) 487-1287 FAX (972) 276-3375 01/99 F-49 NJ3600L Process Silicon Junction Field-Effect Transistor Drain Current as a Function of VDS VGS(OFF) = Ð1.25 V Gfs as a Function of VGS(OFF) 200 Transconductance in mS 375 VGS = Ø V Drain Cu...