InterFET NJ450L
Silicon Junction Field-Effect Transistor
| Part No. | NJ450L |
|---|---|
| Datasheet | NJ450L Download |
| Manufacturer |  InterFET |
| Description | Silicon Junction Field-Effect Transistor |
| Buy | Stock & Price |
ELECTRICAL CHARACTERISTICS
Gate Source Breakdown Voltage Reverse Gate Leakage Current Drain Saturation Current (Pulsed) Gate Source Cutoff Voltage DynamicELECTRICAL CHARACTERISTICS
Forward Transconductance (Pulsed) Input Capacitance Feedback Capacitance Equivalent Noise Voltage gfs Ciss Crss e ¯N 100 35 10 0.9 mS pF pF V(BR)GSS IGSS IDSS VGS(OFF) 5 – 0.1 –4 Min – 25 Typ – 25 – 50 Max Unit V pA mA V NJ450L Process Test Conditions IG = – 1 µA, VDS = ØV VGS = – 15V, VDS = ØV VDS = 15V, VGS = ØV VDS = 15V, ID = 1 nA VDS = 15V, VGS = ØV VDS = ØV, VGS = – 10V VDS = ØV, VGS = – 10V f = 1 kHz f = 1 MHz f = 1 MHz f = 1 kHz nV/√HZ VDG = 4V, ID = 5 mA 1000 N. Shiloh Road, Garland, TX 75042 (972) 487-1287 FAX (972) 276-3375 01/99 F-39 NJ450L Process Silicon Junction Field-Effect Transistor Drain Current as a Function of VDS VGS(OFF) = Ð2.2 V Gfs as a Function of VGS(OFF) 150 Transconductance in mS 150 VGS = Ø V Drain Current in mA 125 VGS = – 0.5 V 100 VGS = –1.0 V 75 VGS = –1.5 V 50 VGS = –2.0 V...