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PAD1 - PicoAmp Diode

General Description

The -45V InterFET PAD1 and PAD2 are targeted for low power and high impedance applications.

Leakages are typically 0.5pA at room temperatures.

The TO-18 package is hermetically sealed and suitable for military applications.

Key Features

  • InterFET N0001H Geometry.
  • Low Leakage: 0.5pA Typical.
  • Low Capacitance: 0.8pF Typical.
  • RoHS Compliant.
  • SMT, TH, and Bare Die Package options.

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Datasheet Details

Part number PAD1
Manufacturer InterFET
File Size 348.82 KB
Description PicoAmp Diode
Datasheet download datasheet PAD1 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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InterFET Product Folder Technical Support Order Now PAD1-2-5 PAD1, PAD2, PAD5 PicoAmp Diode Features • InterFET N0001H Geometry • Low Leakage: 0.5pA Typical • Low Capacitance: 0.8pF Typical • RoHS Compliant • SMT, TH, and Bare Die Package options. Applications • High Impedance Protection Circuits • Low Power Battery Circuitry • High Impedance Diode Switching Description The -45V InterFET PAD1 and PAD2 are targeted for low power and high impedance applications. Leakages are typically 0.5pA at room temperatures. The TO-18 package is hermetically sealed and suitable for military applications. For SOT23 functionality pins 1 and 2 must be externally shorted.