PAD1 Description
The -45V InterFET PAD1 and PAD2 are targeted for low power and high impedance applications. Leakages are typically 0.5pA at room temperatures. The TO-18 package is hermetically sealed and suitable for military applications.
PAD1 Key Features
- InterFET N0001H Geometry
- Low Leakage: 0.5pA Typical
- Low Capacitance: 0.8pF Typical
- RoHS pliant
- SMT, TH, and Bare Die Package options
PAD1 Applications
- High Impedance Protection Circuits