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7413 - Power MOSFET

Key Features

  • 2A.
  • Pulse width ≤ 300µs; duty cycle ≤ 2%. † ISD ≤ 7.2A, di/dt ≤ 120A/µs, VDD ≤ V(BR)DSS, TJ ≤ 150°C Data and specifications subject to change without notice. This product has been designed and qualified for the Automotive [Q101] market. Qualification Standards can be found on IR’s Web site. IR WORLD.

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PD- 91330F SMPS MOSFET Applications l High frequency DC-DC converters IRF7413 HEXFET® Power MOSFET RDS(on) max(mW) 11@VGS = 10V VDSS 30V ID 12A Benefits l Low Gate to Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App.