Description
Specifically design for automotive applications this Widelead TO262 package part has the advantage of having over 50% lower lead resistance and delivering over 20% lower Rds(on) when compared with a traditional TO-262 package housing the same silicon die.
Features
- l Advanced Process Technology l Ultra Low On-Resistance l 50% Lower Lead Resistance l 175°C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l Lead-Free, RoHS Compliant l Automotive Qualified.
- HEXFET® Power MOSFET
D V(BR)DSS
24V
RDS(on) typ. 1.16m
cG
max. 1.30m
ID (Silicon Limited)
382A
S ID (Package Limited)
240A.
AUIRF1324WL Datasheet
