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AUIRF1324WL - Power MOSFET

General Description

Specifically design for automotive applications this Widelead TO262 package part has the advantage of having over 50% lower lead resistance and delivering over 20% lower Rds(on) when compared with a traditional TO-262 package housing the same silicon die.

Key Features

  • l Advanced Process Technology l Ultra Low On-Resistance l 50% Lower Lead Resistance l 175°C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l Lead-Free, RoHS Compliant l Automotive Qualified.
  • HEXFET® Power MOSFET D V(BR)DSS 24V RDS(on) typ. 1.16m cG max. 1.30m ID (Silicon Limited) 382A S ID (Package Limited) 240A.

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📁 Similar Datasheet

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Other Datasheets by International Rectifier (now Infineon)

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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AUTOMOTIVE GRADE PD - 97676A AUIRF1324WL Features l Advanced Process Technology l Ultra Low On-Resistance l 50% Lower Lead Resistance l 175°C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l Lead-Free, RoHS Compliant l Automotive Qualified * HEXFET® Power MOSFET D V(BR)DSS 24V RDS(on) typ. 1.16m cG max. 1.30m ID (Silicon Limited) 382A S ID (Package Limited) 240A Description Specifically design for automotive applications this Widelead TO262 package part has the advantage of having over 50% lower lead resistance and delivering over 20% lower Rds(on) when compared with a traditional TO-262 package housing the same silicon die.