AUIRF1404 Datasheet | International Rectifier

Features l Advanced Planar Technology l Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Repetitive Avalanche Allowed up to Tjmax l Lead-Free, Ro HS pliant l Automotive Qualified- Description Specifically designed for Automotive applications, this Stripe Planar design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area. This benefit bined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in Automotive and a wide variety of other applications. G TO-220AB AUIRF1404 D S HEXFET® Power MOSFET V(BR)DSS RDS(on) typ. max ID (Silicon Limited) 40V 3.5mΩ 4.0mΩ 202A 160A ID (Package Limited) h G Gate D Drain S Source Absolute Maximum Ratings Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless otherwise specified. Parameter ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Silicon Limited) ID @ TC = 100°C Continuous Drain Current, VGS @ 10V (Silicon Limited) ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Package Limited) IDM Pulsed Drain Current Max. 202 h Units 143 160 808 333 2.2 ± 20 620 See Fig. 12a, 12b, 15, 16 1.5 -55 to + 175 300 10 lbf in (1.1N m) c PD @TC = 25°C Power Dissipation Linear Derating Factor VGS Gate-to-Source Voltage EAS IAR EAR dv/dt TJ TSTG Avalanche Current Single Pulse Avalanche Energy (Thermally Limited)...