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AUIRF1404L - Power MOSFET

General Description

Specifically designed for Automotive applications, this Stripe Planar design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area.

Key Features

  • Advanced Planar Technology.
  • Dynamic dV/dT Rating.
  • 175°C Operating Temperature.
  • Fast Switching.
  • Fully Avalanche Rated.
  • Repetitive Avalanche Allowed up to Tjmax.
  • Lead-Free, RoHS Compliant.
  • Automotive Qualified.
  • AUIRF1404L HEXFET® Power MOSFET D VDSS 40V RDS(on) typ. 3.5mΩ max. 4.0mΩ hG ID (Silicon Limited) 162A S ID (Package Limited) 75A.

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Full PDF Text Transcription for AUIRF1404L (Reference)

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AUTOMOTIVE GRADE PD -97680 AUIRF1404S Features ● Advanced Planar Technology ● Dynamic dV/dT Rating ● 175°C Operating Temperature ● Fast Switching ● Fully Avalanche Rated ...

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175°C Operating Temperature ● Fast Switching ● Fully Avalanche Rated ● Repetitive Avalanche Allowed up to Tjmax ● Lead-Free, RoHS Compliant ● Automotive Qualified * AUIRF1404L HEXFET® Power MOSFET D VDSS 40V RDS(on) typ. 3.5mΩ max. 4.0mΩ hG ID (Silicon Limited) 162A S ID (Package Limited) 75A Description Specifically designed for Automotive applications, this Stripe Planar design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area.