AUIRF1404S Datasheet | International Rectifier

Features - Advanced Planar Technology - Dynamic d V/d T Rating - 175°C Operating Temperature - Fast Switching - Fully Avalanche Rated - Repetitive Avalanche Allowed up to Tjmax - Lead-Free, Ro HS pliant - Automotive Qualified - AUIRF1404L HEXFET® Power MOSFET D VDSS 40V RDS(on) typ. 3.5mΩ max. 4.0mΩ h G ID (Silicon Limited) 162A S ID (Package Limited) 75A Description Specifically designed for Automotive applications, this Stripe Planar design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area. This benefit bined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in Automotive and a wide variety of other applications. D2Pak AUIRF1404S TO-262 AUIRF1404L G Gate D Drain S Source Absolute Maximum Ratings Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless otherwise specified. Symbol ID @ TC = 25°C ID @ TC = 100°C ID @ TC = 25°C IDM PD @TA = 25°C PD @TC = 25°C Parameter i Continuous Drain Current, VGS @ 10V (Silicon Limited) i Continuous Drain Current, VGS @ 10V (Silicon Limited) Continuous Drain Current, VGS @ 10V (Package Limited) ™i Pulsed Drain Current Maximum Power Dissipation Maximum Power Dissipation Linear Derating Factor VGS EAS IAR EAR...