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AUIRF1404Z - Power MOSFET

General Description

Specifically designed for Automotive applications, www.DataSheet4U.com this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area.

Key Features

  • l l l l l l l AUIRF1404Z AUIRF1404ZS AUIRF1404ZL HEXFET® Power MOSFET V(BR)DSS RDS(on) max. ID (Silicon Limited) 40V 3.7mΩ 180A 160A Advanced Process Technology Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified.
  • D G S ID (Package Limited) D D n.

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Full PDF Text Transcription for AUIRF1404Z (Reference)

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AUTOMOTIVE GRADE PD - 97460 Features l l l l l l l AUIRF1404Z AUIRF1404ZS AUIRF1404ZL HEXFET® Power MOSFET V(BR)DSS RDS(on) max. ID (Silicon Limited) 40V 3.7mΩ 180A 160A ...

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MOSFET V(BR)DSS RDS(on) max. ID (Silicon Limited) 40V 3.7mΩ 180A 160A Advanced Process Technology Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified * D G S ID (Package Limited) D D n Description Specifically designed for Automotive applications, www.DataSheet4U.com this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating