AUIRF1404Z Datasheet | International Rectifier

Features l l l l l l l AUIRF1404Z AUIRF1404ZS AUIRF1404ZL HEXFET® Power MOSFET V(BR)DSS RDS(on) max. ID (Silicon Limited) 40V 3.7mΩ 180A 160A Advanced Process Technology Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free, Ro HS pliant Automotive Qualified - D ID (Package Limited) D D n Description Specifically designed for Automotive applications, .. this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features bine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications. G TO-220AB AUIRF1404Z D2Pak AUIRF1404ZS TO-262 AUIRF1404ZL G Gate D Drain S Source Absolute Maximum Ratings Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless otherwise specified. Parameter ID @ TC = 25°C ID @ TC = 25°C IDM PD @TC = 25°C VGS EAS EAS (tested ) IAR EAR TJ TSTG Continuous Drain Current, VGS @ 10V (Silicon Limited) Continuous Drain Current, VGS @ 10V (Package Limited) Pulsed Drain Current ID @ TC = 100°C Continuous Drain Current, VGS @ 10V (Silicon Limited) Max. 180 120 160 710 200 n Units ™ Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy (Thermally Limited) Single Pulse...