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AUIRF1405ZL - HEXFET Power MOSFET

Download the AUIRF1405ZL datasheet PDF. This datasheet also covers the AUIRF1405ZS variant, as both devices belong to the same hexfet power mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low onresistance per silicon area.

Key Features

  • l l l l l AUIRF1405ZS AUIRF1405ZL HEXFET® Power MOSFET V(BR)DSS RDS(on) max. ID D l l Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified.
  • D 55V 4.9mΩ 150A G S.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (AUIRF1405ZS_InternationalRectifier.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription for AUIRF1405ZL (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for AUIRF1405ZL. For precise diagrams, and layout, please refer to the original PDF.

PD www.DataSheet4U.com - 97486A AUTOMOTIVE GRADE Features l l l l l AUIRF1405ZS AUIRF1405ZL HEXFET® Power MOSFET V(BR)DSS RDS(on) max. ID D l l Advanced Process Technolog...

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Power MOSFET V(BR)DSS RDS(on) max. ID D l l Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified * D 55V 4.9mΩ 150A G S Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low onresistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating .