Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low onresistance per silicon area.
Key Features
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AUIRF1405ZS AUIRF1405ZL
HEXFET® Power MOSFET
V(BR)DSS RDS(on) max. ID
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Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified.
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PD www.DataSheet4U.com - 97486A AUTOMOTIVE GRADE Features l l l l l AUIRF1405ZS AUIRF1405ZL HEXFET® Power MOSFET V(BR)DSS RDS(on) max. ID D l l Advanced Process Technolog...
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Power MOSFET V(BR)DSS RDS(on) max. ID D l l Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified * D 55V 4.9mΩ 150A G S Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low onresistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating .