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AUIRF3315S - Power MOSFET

Description

Specifically designed for Automotive applications, this cellular design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area.

Features

  • l l l l l l l Advanced Planar Technology Low On-Resistance Dynamic dV/dT Rating HEXFET® Power MOSFET D AUIRF3315S 150V 82m 21A 175°C Operating Temperature Fast Switching Fully Avalanche Rated G S l l Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified.
  • VDSS RDS(on) max. ID D.

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PD - 97733 AUTOMOTIVE GRADE Features l l l l l l l Advanced Planar Technology Low On-Resistance Dynamic dV/dT Rating HEXFET® Power MOSFET D AUIRF3315S 150V 82m 21A 175°C Operating Temperature Fast Switching Fully Avalanche Rated G S l l Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified * VDSS RDS(on) max. ID D Description Specifically designed for Automotive applications, this cellular design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area.
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