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AUIRF3805 - HEXFET Power MOSFET

This page provides the datasheet information for the AUIRF3805, a member of the AUIRF3805S HEXFET Power MOSFET family.

Description

Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area.

Features

  • l l l l l l l HEXFET® Power MOSFET D AUIRF3805 AUIRF3805S AUIRF3805L 55V 2.6mΩ 210A c 3.3mΩ max. Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified.
  • V(BR)DSS RDS(on) typ. G S ID (Silicon Limited) ID (Package Limited) 160A D D.

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www.DataSheet4U.com AUTOMOTIVE GRADE PD - 96319 Features l l l l l l l HEXFET® Power MOSFET D AUIRF3805 AUIRF3805S AUIRF3805L 55V 2.6mΩ 210A c 3.3mΩ max. Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified * V(BR)DSS RDS(on) typ. G S ID (Silicon Limited) ID (Package Limited) 160A D D Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating.
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