Download the AUIRF3805 datasheet PDF.
This datasheet also covers the AUIRF3805S variant, as both devices belong to the same hexfet power mosfet family and are provided as variant models within a single manufacturer datasheet.
General Description
Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area.
Key Features
l l l l l l l
HEXFET® Power MOSFET
D
AUIRF3805 AUIRF3805S AUIRF3805L
55V 2.6mΩ 210A c 3.3mΩ max. Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified.
V(BR)DSS RDS(on) typ. G S
ID (Silicon Limited)
ID (Package Limited) 160A
D D.
Note: The manufacturer provides a single datasheet file (AUIRF3805S_InternationalRectifier.pdf) that lists specifications for multiple related part numbers.
Full PDF Text Transcription for AUIRF3805 (Reference)
Note: Below is a high-fidelity text extraction (approx. 800 characters) for
AUIRF3805. For precise diagrams, and layout, please refer to the original PDF.
www.DataSheet4U.com AUTOMOTIVE GRADE PD - 96319 Features l l l l l l l HEXFET® Power MOSFET D AUIRF3805 AUIRF3805S AUIRF3805L 55V 2.6mΩ 210A c 3.3mΩ max. Advanced Process...
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805 AUIRF3805S AUIRF3805L 55V 2.6mΩ 210A c 3.3mΩ max. Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified * V(BR)DSS RDS(on) typ. G S ID (Silicon Limited) ID (Package Limited) 160A D D Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive av
AUIRF3805 Datasheet
