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AUIRF4104 - Power MOSFET

Description

Low On-Resistance Dynamic dV/dT Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified

V(BR)DSS RDS(on) typ.

max.

Features

  • O O O O O O O O AUIRF4104 AUIRF4104S HEXFET® Power MOSFET D www. DataSheet4U. com.

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PD - 97471A AUTOMOTIVE GRADE Features O O O O O O O O AUIRF4104 AUIRF4104S HEXFET® Power MOSFET D www.DataSheet4U.com Description Low On-Resistance Dynamic dV/dT Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified * V(BR)DSS RDS(on) typ. max. ID (Silicon Limited) 40V 4.3mΩ 5.5mΩ 120A 75A G S ID (Package Limited) k Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating .
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