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AUIRF4905S - Power MOSFET

Description

Specifically designed for Automotive applications, this cellular design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area.

Features

  • l l l l l l l l Advanced Planar Technology P-Channel MOSFET Low On-Resistance 150°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified.
  • AUIRF4905S/L D HEXFET® Power MOSFET V(BR)DSS RDS(on) max. ID (Silicon Limited) -55V 20m -70A -42A G S ID (Package Limited) D.

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AUTOMOTIVE GRADE Features l l l l l l l l Advanced Planar Technology P-Channel MOSFET Low On-Resistance 150°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified * AUIRF4905S/L D HEXFET® Power MOSFET V(BR)DSS RDS(on) max. ID (Silicon Limited) -55V 20m -70A -42A G S ID (Package Limited) D Description Specifically designed for Automotive applications, this cellular design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area.
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