Datasheet4U Logo Datasheet4U.com

AUIRF4905S - Power MOSFET

General Description

Specifically designed for Automotive applications, this cellular design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area.

Key Features

  • l l l l l l l l Advanced Planar Technology P-Channel MOSFET Low On-Resistance 150°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified.
  • AUIRF4905S/L D HEXFET® Power MOSFET V(BR)DSS RDS(on) max. ID (Silicon Limited) -55V 20m -70A -42A G S ID (Package Limited) D.

📥 Download Datasheet

Full PDF Text Transcription for AUIRF4905S (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for AUIRF4905S. For precise diagrams, and layout, please refer to the original PDF.

AUTOMOTIVE GRADE Features l l l l l l l l Advanced Planar Technology P-Channel MOSFET Low On-Resistance 150°C Operating Temperature Fast Switching Repetitive Avalanche Al...

View more extracted text
nce 150°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified * AUIRF4905S/L D HEXFET® Power MOSFET V(BR)DSS RDS(on) max. ID (Silicon Limited) -55V 20m -70A -42A G S ID (Package Limited) D Description Specifically designed for Automotive applications, this cellular design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area.