AUIRF5210S Datasheet Power MOSFET

Manufacturer: International Rectifier (now Infineon)

Overview: AUTOMOTIVE GRADE AUIRF5210S HEXFET® Power MOSFET -100V 60m -38A.

AUIRF5210S power mosfet by International Rectifier (now Infineon) - Datasheet Preview

Datasheet Details

Part number	AUIRF5210S
Manufacturer	International Rectifier (now Infineon)
File Size	238.22 KB
Description	Power MOSFET
Download	AUIRF5210S Download (PDF)

General Description

Specifically designed for Automotive applications, this cellular design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area.

This benefit combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in Automotive and a wide variety of other applications.

G D S D2Pak AUIRF5210S G D S Gate Drain Source Absolute Maximum Ratings Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device.

Key Features

l l l l l l l l Advanced Planar Technology P-Channel MOSFET Low On-Resistance Dynamic dV/dT Rating D V(BR)DSS RDS(on) max. ID 175°C Operating Temperature Fast Switching Fully Avalanche Rated G S l l Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified.
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