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AUIRF540Z - HEXFET Power MOSFET

Download the AUIRF540Z datasheet PDF. This datasheet also covers the AUIRF540ZS variant, as both devices belong to the same hexfet power mosfet family and are provided as variant models within a single manufacturer datasheet.

Description

Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area.

Features

  • l l l l l l l AUIRF540Z AUIRF540ZS HEXFET® Power MOSFET V(BR)DSS Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified.
  • D 100V 21mΩ 36A max. 26.5mΩ RDS(on) typ. G S ID.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (AUIRF540ZS_InternationalRectifier.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription

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www.DataSheet4U.com AUTOMOTIVE GRADE PD - 96326 Features l l l l l l l AUIRF540Z AUIRF540ZS HEXFET® Power MOSFET V(BR)DSS Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified * D 100V 21mΩ 36A max. 26.5mΩ RDS(on) typ. G S ID Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating .
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