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AUIRF540ZS - HEXFET Power MOSFET

Description

Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area.

Features

  • l l l l l l l AUIRF540Z AUIRF540ZS HEXFET® Power MOSFET V(BR)DSS Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified.
  • D 100V 21mΩ 36A max. 26.5mΩ RDS(on) typ. G S ID.

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📁 Similar Datasheet

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AUIRF540ZS Power MOSFET Infineon
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Other Datasheets by International Rectifier (now Infineon)

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AUIRF540Z HEXFET Power MOSFET
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Full PDF Text Transcription

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www.DataSheet4U.com AUTOMOTIVE GRADE PD - 96326 Features l l l l l l l AUIRF540Z AUIRF540ZS HEXFET® Power MOSFET V(BR)DSS Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified * D 100V 21mΩ 36A max. 26.5mΩ RDS(on) typ. G S ID Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating .
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