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AUIRF7103Q - Power MOSFET

General Description

Specifically designed for Automotive applications, this cellular design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area.

Key Features

  • l Advanced Planar Technology l Dual N Channel MOSFET l Low On-Resistance l Dynamic dV/dT Rating l 175°C Operating Temperature l Fast Switching l Lead-Free, RoHS Compliant l Automotive Qualified.

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📁 Similar Datasheet

Part Number Description Manufacturer
AUIRF7103Q Dual N-Channel MOSFET Infineon

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Features l Advanced Planar Technology l Dual N Channel MOSFET l Low On-Resistance l Dynamic dV/dT Rating l 175°C Operating Temperature l Fast Switching l Lead-Free, RoHS Compliant l Automotive Qualified* AUTOMOTIVE GRADE AUIRF7103Q HEXFET® Power MOSFET S1 1 G1 2 S2 3 G2 4 8 D1 7 D1 6 D2 5 D2 Top View V(BR)DSS RDS(on) max. ID 50V 130m 3.0A Description Specifically designed for Automotive applications, this cellular design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area.