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Features
l Advanced Planar Technology l Dual N Channel MOSFET l Low On-Resistance l Dynamic dV/dT Rating l 175°C Operating Temperature l Fast Switching l Lead-Free, RoHS Compliant l Automotive Qualified*
AUTOMOTIVE GRADE
AUIRF7103Q
HEXFET® Power MOSFET
S1 1 G1 2 S2 3 G2 4
8 D1 7 D1 6 D2 5 D2
Top View
V(BR)DSS RDS(on) max. ID
50V 130m
3.0A
Description
Specifically designed for Automotive applications, this cellular design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area.
AUIRF7103Q Datasheet
