Description
Specifically designed for Automotive applications, these HEXFET® Power MOSFET's in a Dual SO-8 package utilize the lastest processing techniques to achieve extremely low on-resistance per silicon area.
Features
- l l l l l l l l
HEXFET® Power MOSFET
D1 D1 D2 D2
Advanced Planar Technology Low On-Resistance Dual P Channel MOSFET Surface Mount Available in Tape & Reel 150°C Operating Temperature Automotive [Q101] Qualified Lead-Free, RoHS Compliant
S1 G1 S2 G2
1 2 3 4
8 7
V(BR)DSS RDS(on) typ. -30V 0.042Ω
6 5
max. 0.058Ω ID -4.9A
Top View.
AUIRF7316Q Datasheet
