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AUIRF7319Q - Power MOSFET

General Description

Specifically designed for Automotive applications, these HEXFET® Power MOSFET's in a Dual SO-8 package utilize the lastest processing techniques to achieve extremely low on-resistance per silicon area.

Key Features

  • l l l l l l l AUIRF7319Q N-Ch P-Ch -30V V(BR)DSS RDS(on) typ. 30V Advanced Planar Technology Low On-Resistance Dual N and P Channel MOSFET Surface Mount Fully Avalanche Rated Automotive [Q101] Qualified.
  • Lead-Free, RoHS Compliant S1 G1 S2 G2 N-.

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📁 Similar Datasheet

Part Number Description Manufacturer
AUIRF7319Q Dual N/P-Channel MOSFET Infineon

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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AUTOMOTIVE MOSFET PD - 96364B HEXFET® Power MOSFET Features l l l l l l l AUIRF7319Q N-Ch P-Ch -30V V(BR)DSS RDS(on) typ. 30V Advanced Planar Technology Low On-Resistance Dual N and P Channel MOSFET Surface Mount Fully Avalanche Rated Automotive [Q101] Qualified* Lead-Free, RoHS Compliant S1 G1 S2 G2 N-CHANNEL MOSFET 1 8 2 3 4 7 6 5 D1 D1 D2 D2 0.023Ω 0.042Ω P-CHANNEL MOSFET max. 0.029Ω 0.058Ω ID 6.5A -4.9A Top View Description Specifically designed for Automotive applications, these HEXFET® Power MOSFET's in a Dual SO-8 package utilize the lastest processing techniques to achieve extremely low on-resistance per silicon area.