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AUIRF7379Q - Power MOSFET

General Description

Specifically designed for Automotive applications, these HEXFET® Power MOSFET's in a Dual SO-8 package utilize the lastest processing techniques to achieve extremely low on-resistance per silicon area.

Key Features

  • l l l l l l l l HEXFET® Power MOSFET N-.

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Part Number Description Manufacturer
AUIRF7379Q Dual N/P-Channel MOSFET Infineon

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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AUTOMOTIVE MOSFET PD - 96366B AUIRF7379Q Features l l l l l l l l HEXFET® Power MOSFET N-CHANNEL MOSFET 1 8 2 3 4 7 6 5 Advanced Planar Technology Low On-Resistance Dual N and P Channel MOSFET Surface Mount Available in Tape & Reel 150°C Operating Temperature Automotive [Q101] Qualified Lead-Free, RoHS Compliant N-Ch D1 D1 D2 D2 P-Ch -30V S1 G1 S2 G2 V(BR)DSS RDS(on) typ. 30V 0.038Ω 0.070Ω P-CHANNEL MOSFET max. 0.045Ω 0.090Ω ID 5.8A -4.3A Description Specifically designed for Automotive applications, these HEXFET® Power MOSFET's in a Dual SO-8 package utilize the lastest processing techniques to achieve extremely low on-resistance per silicon area.