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AUIRF7640S2TR - DirectFET Power MOSFET

Datasheet Summary

Description

The AUIRF7640S2TR/TR1 combines the latest Automotive HEXFET® Power MOSFET Silicon technology with the advanced DirectFET packaging platform to produce a best in class part for Automotive Class D audio amplifier applications.

Features

  • combine to make this MOSFET a highly desirable component in Automotive Class D audio amplifier and other high speed switching systems. Absolute Maximum Ratings Parameter VDS VGS ID @ TC = 25°C ID @ TC = 100°C ID @ TA = 25°C ID @ TC = 25°C IDM PD @TC = 25°C PD @TA = 25°C EAS EAS (tested) IAR EAR TP TJ TSTG Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V (Silicon Limited)f Continuous Drain Current, VGS @ 10V (Silicon Limited)f Continuous Drain Current, VGS @ 10.

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DataSheet.in PD -97551 AUTOMOTIVE GRADE • Advanced Process Technology • Optimized for Class D Audio Amplifier and High Speed • • • • • • • • • Switching Applications Low Rds(on) for Improved Efficiency Low Qg for Better THD and Improved Efficiency Low Qrr for Better THD and Lower EMI Low Parasitic Inductance for Reduced Ringing and Lower EMI Delivers up to 100W per Channel into an 8Ω Load Dual Sided Cooling 175°C Operating Temperature Repetitive Avalanche Capability for Robustness and Reliability Lead free, RoHS and Halogen free SB SC M2 M4 DirectFET™ Power MOSFET ‚ V(BR)DSS 60V RDS(on) typ. 27m max. RG (typical) Qg (typical) AUIRF7640S2TR AUIRF7640S2TR1 : 36m: 3.5: 7.
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