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AUIRF7647S2TR1 - DirectFET Power MOSFET

This page provides the datasheet information for the AUIRF7647S2TR1, a member of the AUIRF7647S2TR DirectFET Power MOSFET family.

Datasheet Summary

Description

The AUIRF7647S2TR/TR1 combines the latest Automotive HEXFET® Power MOSFET Silicon technology with the advanced DirectFET packaging platform to produce a best in class part for Automotive Class D audio amplifier applications.

Features

  • combine to make this MOSFET a highly desirable component in Automotive Class D audio amplifier systems. Absolute Maximum Ratings Parameter VDS VGS ID @ TC = 25°C ID @ TC = 100°C ID @ TA = 25°C IDM PD @TC = 25°C PD @TA = 25°C EAS EAS(tested) IAR EAR TP TJ TSTG Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V (Silicon Limited)f Continuous Drain Current, VGS @ 10V (Silicon Limited)f Max. 100 ± 20 24 17 5.9 95 41 2.5 45 67 See Fig. 18a,18b,16,17 270 -55 to + 175.

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DataSheet.in PD - 97537 AUTOMOTIVE GRADE • • • • • • • • • • • Advanced Process Technology Optimized for Class D Audio Amplifier Applications Low Rds(on) for Improved Efficiency Low Qg for Better THD and Improved Efficiency Low Qrr for Better THD and Lower EMI Low Parasitic Inductance for Reduced Ringing and Lower EMI Delivers up to 100W per Channel into 8Ω with No Heatsink Dual Sided Cooling 175°C Operating Temperature Repetitive Avalanche Capability for Robustness and Reliability Lead free, RoHS and Halogen free AUIRF7647S2TR AUIRF7647S2TR1 DirectFET™ Power MOSFET ‚ V(BR)DSS 100V RDS(on) typ. 26mΩ max. 31mΩ RG (typical) 1.
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