AUIRF7732S2TR Datasheet | International Rectifier

AUIRF7732S2Pb F AUIRF7732S2TR/TR1 - Advanced Process Technology - Optimized for Automotive DC-DC, Motor Drive and other Heavy Load Applications - Exceptionally Small Footprint and Low Profile - High Power Density - Low Parasitic Parameters - Dual Sided Cooling - 175°C Operating Temperature - Repetitive Avalanche Capability for Robustness and Reliability - Lead free, Ro HS and Halogen free Direct FET® Power MOSFET ‚ V(BR)DSS RDS(on) typ. max. ID (Silicon Limited) Qg 40V 5.5mΩ 6.95mΩ 55A 30n C Applicable Direct FET Outline and Substrate Outline  SB SC M2 M4 Direct FET ™ ISOMETRIC L4 L6 L8 Description The AUIRF7732S2 bines the latest Automotive HEXFET® Power MOSFET Silicon technology with the advanced Direct FET ® packaging to achieve low gate charge as well as the lowest on-state resistance in a package that has the footprint which is 38% smaller than an SO-8 and only 0.7mm profile. The Direct FET® package is patible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The Direct FET ® package allows dual sided cooling to maximize thermal transfer in automotive power systems. This HEXFET ® Power MOSFET is designed for applications where efficiency and power density are of value. The advanced Direct FET ® packaging platform coupled with the latest silicon technology allows the AUIRF7732S2 to offer substantial system level savings and performance improvement specifically in high frequency DC-DC, motor drive and other heavy load applications on ICE, HEV and EV platforms. This MOSFET utilizes the latest processing techniques to achieve low on-resistance and low Qg per silicon area . Additional Features of this MOSFET are 175°C operating junction temperature and high repetitive peak current capability. These Features bine to make this MOSFET a highly efficient,...