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AUIRF7736M2TR - Power MOSFET

Datasheet Summary

Description

The AUIRF7736M2 combines the latest Automotive HEXFET® Power MOSFET Silicon technology with the advanced DirectFET® packaging technology to achieve exceptional performance in a package that has the footprint of an SO-8 or 5X6mm PQFN and only 0.7mm profile.

Features

  • of this MOSFET are 175°C operating junction temperature and high repetitive peak current capability. These features combine to make this MOSFET a highly efficient, robust and reliable device for high current automotive.

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Full PDF Text Transcription

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PD - 96316B AUTOMOTIVE GRADE Automotive DirectFET® Power MOSFET ‚ • Advanced Process Technology • Optimized for Automotive Motor Drive, DC-DC and • • • • • • • • AUIRF7736M2TR AUIRF7736M2TR1 40V 2.5mΩ 3.0mΩ 108A 72nC other Heavy Load Applications Exceptionally Small Footprint and Low Profile High Power Density Low Parasitic Parameters Dual Sided Cooling 175°C Operating Temperature Repetitive Avalanche Capability for Robustness and Reliability Lead Free, RoHS Compliant and Halogen Free Automotive Qualified * V(BR)DSS RDS(on) typ. max.
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