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AUIRF7759L2TR1 - Power MOSFET

This page provides the datasheet information for the AUIRF7759L2TR1, a member of the AUIRF7759L2TR Power MOSFET family.

Datasheet Summary

Description

The AUIRF7759L2TR(1) combines the latest Automotive HEXFET® Power MOSFET Silicon technology with the advanced DirectFET® packaging to achieve the lowest on-state resistance in a package that has the footprint of a DPak (TO-252AA) and only 0.7 mm profile.

Features

  • of this MOSFET are 175°C operating junction temperature and high repetitive peak current capability. These features combine to make this MOSFET a highly efficient, robust and reliable device for high current automotive.

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Full PDF Text Transcription

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AUTOMOTIVE GRADE PD - 96426 AUIRF7759L2TR • Advanced Process Technology • Optimized for Automotive Motor Drive, DC-DC and other Heavy Load Applications • Exceptionally Small Footprint and Low Profile • High Power Density • Low Parasitic Parameters • Dual Sided Cooling • 175°C Operating Temperature • Repetitive Avalanche Capability for Robustness and Reliability • Lead Free, RoHS Compliant and Halogen Free • Automotive Qualified * AUIRF7759L2TR1 Automotive DirectFET® Power MOSFET ‚ V(BR)DSS 75V RDS(on) typ. 1.8mΩ max. 2.
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