Datasheet4U Logo Datasheet4U.com

AUIRF7805Q - Power MOSFET

Description

Specifically designed for Automotive applications, these HEXFET® Power MOSFET's in a Dual SO-8 package utilize the lastest processing techniques to achieve extremely low on-resistance per silicon area.

Features

  • l Advanced Planar Technology l Low On-Resistance l Logic Level l N Channel MOSFET l Surface Mount l Available in Tape & Reel l 150°C Operating Temperature l Automotive [Q101] Qualified l Lead-Free, RoHS Compliant AUIRF7805Q HEXFET® Power MOSFET S1 S2 S3 G4 VAA 8D (BR)DSS 30V 7D 6D 5D RDS(on) typ. 9.2mΩ max. 11mΩ Top View ID 13A.

📥 Download Datasheet

Datasheet preview – AUIRF7805Q

📁 Similar Datasheet

Other Datasheets by International Rectifier

Full PDF Text Transcription

Click to expand full text
PD – 96367B Features l Advanced Planar Technology l Low On-Resistance l Logic Level l N Channel MOSFET l Surface Mount l Available in Tape & Reel l 150°C Operating Temperature l Automotive [Q101] Qualified l Lead-Free, RoHS Compliant AUIRF7805Q HEXFET® Power MOSFET S1 S2 S3 G4 VAA 8D (BR)DSS 30V 7D 6D 5D RDS(on) typ. 9.2mΩ max. 11mΩ Top View ID 13A Description Specifically designed for Automotive applications, these HEXFET® Power MOSFET's in a Dual SO-8 package utilize the lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of these Automotive qualified HEXFET Power MOSFET's are a 150°C junction operating temperature, fast switching speed and improved repetitive avalanche rating.
Published: |