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AUIRFN8458 Datasheet Dual N-Channel MOSFET

Manufacturer: International Rectifier (now Infineon)

General Description

Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area.

Additional

Overview

  AUTOMOTIVE GRADE AUIRFN8458 VDSS RDS(on) typ.

max ID (@TC (Bottom) = 25°C  .

Key Features

  • Advanced Process Technology.
  • Dual N-Channel MOSFET.
  • Ultra Low On-Resistance.
  • 175°C Operating Temperature.
  • Fast Switching.
  • Repetitive Avalanche Allowed up to Tjmax.
  • Lead-Free, RoHS Compliant.
  • Automotive Qualified.