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AUIRFR2607Z - Power MOSFET

General Description

Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area.

Key Features

  • l l l l l l l Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified.
  • V(BR)DSS 75V 17.6mΩ 22mΩ 45A k 42A RDS(on) typ. G S max. ID (Silicon Limited) ID (Package Limited) D.

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📁 Similar Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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PD - 96323 AUTOMOTIVE MOSFET AUIRFR2607Z HEXFET® Power MOSFET D Features l l l l l l l Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified * V(BR)DSS 75V 17.6mΩ 22mΩ 45A k 42A RDS(on) typ. G S max. ID (Silicon Limited) ID (Package Limited) D Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating .