Datasheet4U Logo Datasheet4U.com

AUIRFR3806 - HEXFET Power MOSFET

Datasheet Summary

Description

Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area.

Features

  • Advanced Process Technology.
  • Ultra Low On-Resistance.
  • Dynamic dV/dT Rating.
  • 175°C Operating Temperature.
  • Fast Switching.
  • Repetitive Avalanche Allowed up to Tjmax.
  • Lead-Free, RoHS Compliant.
  • Automotive Qualified.
  • G HEXFET® Power MOSFET D VDSS RDS(on) typ. max. S ID 60V 12.6mΩ 15.8mΩ 43A.

📥 Download Datasheet

Datasheet preview – AUIRFR3806

📁 Similar Datasheet

Other Datasheets by International Rectifier

Full PDF Text Transcription

Click to expand full text
AUTOMOTIVE GRADE PD - 97644 AUIRFR3806 Features ● Advanced Process Technology ● Ultra Low On-Resistance ● Dynamic dV/dT Rating ● 175°C Operating Temperature ● Fast Switching ● Repetitive Avalanche Allowed up to Tjmax ● Lead-Free, RoHS Compliant ● Automotive Qualified * G HEXFET® Power MOSFET D VDSS RDS(on) typ. max. S ID 60V 12.6mΩ 15.8mΩ 43A Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating .
Published: |