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AUIRFR3806 - HEXFET Power MOSFET

General Description

Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area.

Key Features

  • Advanced Process Technology.
  • Ultra Low On-Resistance.
  • Dynamic dV/dT Rating.
  • 175°C Operating Temperature.
  • Fast Switching.
  • Repetitive Avalanche Allowed up to Tjmax.
  • Lead-Free, RoHS Compliant.
  • Automotive Qualified.
  • G HEXFET® Power MOSFET D VDSS RDS(on) typ. max. S ID 60V 12.6mΩ 15.8mΩ 43A.

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📁 Similar Datasheet

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Other Datasheets by International Rectifier (now Infineon)

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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AUTOMOTIVE GRADE PD - 97644 AUIRFR3806 Features ● Advanced Process Technology ● Ultra Low On-Resistance ● Dynamic dV/dT Rating ● 175°C Operating Temperature ● Fast Switching ● Repetitive Avalanche Allowed up to Tjmax ● Lead-Free, RoHS Compliant ● Automotive Qualified * G HEXFET® Power MOSFET D VDSS RDS(on) typ. max. S ID 60V 12.6mΩ 15.8mΩ 43A Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating .