Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low onresistance per silicon area.
Key Features
HEXFET® Power MOSFET
D
AUIRFR48Z
V(BR)DSS RDS(on) max. ID (Silicon Limited) 55V 11mΩ 62A 42A
Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified.
Full PDF Text Transcription for AUIRFR48Z (Reference)
Note: Below is a high-fidelity text extraction (approx. 800 characters) for
AUIRFR48Z. For precise diagrams, and layout, please refer to the original PDF.
AUTOMOTIVE GRADE PD - 97586 Features ● ● ● ● ● ● ● HEXFET® Power MOSFET D AUIRFR48Z V(BR)DSS RDS(on) max. ID (Silicon Limited) 55V 11mΩ 62A 42A Advanced Process Technolog...
View more extracted text
max. ID (Silicon Limited) 55V 11mΩ 62A 42A Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified * G S ID (Package Limited) D S Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low onresistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating .