Datasheet Summary
AUTOMOTIVE GRADE
- 97586
Features
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- HEXFET® Power MOSFET
V(BR)DSS RDS(on) max. ID (Silicon Limited) 55V 11mΩ 62A 42A
Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS pliant Automotive Qualified
- G S
ID (Package Limited)
Description
Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low onresistance per silicon area. Additional Features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating ....
