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AUIRFR48Z - Power MOSFET

Datasheet Summary

Description

Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low onresistance per silicon area.

Features

  • HEXFET® Power MOSFET D AUIRFR48Z V(BR)DSS RDS(on) max. ID (Silicon Limited) 55V 11mΩ 62A 42A Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified.
  • G S ID (Package Limited) D S.

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AUTOMOTIVE GRADE PD - 97586 Features ● ● ● ● ● ● ● HEXFET® Power MOSFET D AUIRFR48Z V(BR)DSS RDS(on) max. ID (Silicon Limited) 55V 11mΩ 62A 42A Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified * G S ID (Package Limited) D S Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low onresistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating .
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