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AUTOMOTIVE GRADE
AUIRFR8401 AUIRFU8401
HEXFET® Power MOSFET
Features Advanced Process Technology New Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified *
D
VDSS RDS(on) typ.
40V 3.2m 4.25m 100A 100A
G S
max
ID (Silicon Limited) ID (Package Limited)
Description Specifically designed for Automotive applications, this HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low onresistance per silicon area.