Datasheet4U Logo Datasheet4U.com

AUIRFR9024N - Power MOSFET

Description

Specifically designed for Automotive applications, this Cellular design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low onresistance per silicon area.

Features

  • l Advanced Planar Technology l Low On-Resistance l P-Channel l Dynamic dV/dT Rating l 150°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Repetitive Avalanche Allowed up to Tjmax l Lead-Free, RoHS Compliant l Automotive Qualified.
  • D AUIRFR9024N AUIRFU9024N HEXFET® Power MOSFET V(BR)DSS -55V 0.175Ω -11A G S RDS(on) max. ID.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
AUIRFR9024N Power MOSFET Infineon
AUIRFR024N Power MOSFET Infineon
AUIRFR120Z Power MOSFET Infineon
AUIRFR2607Z Power MOSFET Infineon
AUIRFR2905Z Power MOSFET Infineon

Other Datasheets by International Rectifier (now Infineon)

Part Number Description
AUIRFR024N Power MOSFET
AUIRFR1010Z Power MOSFET
AUIRFR1018E Power MOSFET
AUIRFR120Z Power MOSFET
AUIRFR2307Z HEXFET Power MOSFET

Full PDF Text Transcription

Click to expand full text
AUTOMOTIVE GRADE PD - 96351 Features l Advanced Planar Technology l Low On-Resistance l P-Channel l Dynamic dV/dT Rating l 150°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Repetitive Avalanche Allowed up to Tjmax l Lead-Free, RoHS Compliant l Automotive Qualified * D AUIRFR9024N AUIRFU9024N HEXFET® Power MOSFET V(BR)DSS -55V 0.175Ω -11A G S RDS(on) max. ID Description Specifically designed for Automotive applications, this Cellular design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low onresistance per silicon area.
Published: |