Description
Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area.
Features
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Advanced Process Technology Ultra Low On-Resistance Enhanced dV/dT and dI/dT capability 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified.
- AUIRFS3107 AUIRFSL3107
D
HEXFET® Power MOSFET
G S
D
VDSS RDS(on) typ. max. ID (Silicon Limited) ID (Package Limited)
D
75V 2.5m: 3.0m: 230A 195A
c.
AUIRFS3107 Datasheet
