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AUIRFS3107 - Power MOSFET

General Description

Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area.

Key Features

  • l l l l l l l l Advanced Process Technology Ultra Low On-Resistance Enhanced dV/dT and dI/dT capability 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified.
  • AUIRFS3107 AUIRFSL3107 D HEXFET® Power MOSFET G S D VDSS RDS(on) typ. max. ID (Silicon Limited) ID (Package Limited) D 75V 2.5m: 3.0m: 230A 195A c.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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AUTOMOTIVE GRADE PD - 96394A Features l l l l l l l l Advanced Process Technology Ultra Low On-Resistance Enhanced dV/dT and dI/dT capability 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified * AUIRFS3107 AUIRFSL3107 D HEXFET® Power MOSFET G S D VDSS RDS(on) typ. max. ID (Silicon Limited) ID (Package Limited) D 75V 2.5m: 3.0m: 230A 195A c Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating .