AUIRFS3206 Datasheet | International Rectifier

AUTOMOTIVE GRADE - 96401A Features l l l l l l l l AUIRFS3206 AUIRFSL3206 HEXFET® Power MOSFET Advanced Process Technology Ultra Low On-Resistance Enhanced d V/d T and d I/d T capability 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free, Ro HS pliant Automotive Qualified - G S V(BR)DSS RDS(on) typ. max. ID (Silicon Limited) ID (Package Limited) 60V 2.4m: 3.0m: 210A 120A c Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional Features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These Features bine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications. D2Pak AUIRFS3206 G D TO-262 AUIRFSL3206 S Gate Drain Source...