AUIRFS4610 Datasheet | International Rectifier

AUTOMOTIVE GRADE - 96325 .. Features l l l l l l l l HEXFET® Power MOSFET AUIRFB4610 AUIRFS4610 100V 11m: 14m: 73A Advanced Process Technology Ultra Low On-Resistance Enhanced d V/d T and d I/d T capability 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free, Ro HS pliant Automotive Qualified - G S V(BR)DSS RDS(on) typ. max. ID Description Specifically designed for Automotive applications, this Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional Features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These Features bine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications. HEXFET® TO-220AB AUIRFB4610 D2Pak AUIRFS4610 Gate...