AUIRFS8407-7P Datasheet | International Rectifier

AUTOMOTIVE GRADE Features - - - - - - - AUIRFS8407-7P HEXFET® Power MOSFET Advanced Process Technology New Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS pliant Automotive Qualified - G S VDSS RDS(on) typ. max. ID (Silicon Limited) ID (Package Limited) 40V 1.0mΩ 1.3mΩ 306A 240A Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional Features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche...