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AUIRFS8407-7P - Power MOSFET

Description

Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area.

Features

  • AUIRFS8407-7P HEXFET® Power MOSFET D Advanced Process Technology New Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified.
  • G S VDSS RDS(on) typ. max. ID (Silicon Limited) ID (Package Limited) D 40V 1.0mΩ 1.3mΩ 306A 240A.

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AUTOMOTIVE GRADE Features        AUIRFS8407-7P HEXFET® Power MOSFET D Advanced Process Technology New Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified * G S VDSS RDS(on) typ. max. ID (Silicon Limited) ID (Package Limited) D 40V 1.0mΩ 1.3mΩ 306A 240A Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating.
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