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AUIRFSL3004 - Power MOSFET

Download the AUIRFSL3004 datasheet PDF. This datasheet also covers the AUIRFS3004 variant, as both devices belong to the same power mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area.

Key Features

  • l l l l l l l Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified.
  • G S D VDSS RDS(on) typ. max. ID (Silicon Limited) ID (Package Limited) D 40V 1.4mΩ 1.75mΩ 340A 195A c.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (AUIRFS3004_InternationalRectifier.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription for AUIRFSL3004 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for AUIRFSL3004. For precise diagrams, and layout, please refer to the original PDF.

AUTOMOTIVE GRADE PD - 96400A AUIRFS3004 AUIRFSL3004 HEXFET® Power MOSFET D Features l l l l l l l Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temp...

View more extracted text
vanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified * G S D VDSS RDS(on) typ. max. ID (Silicon Limited) ID (Package Limited) D 40V 1.4mΩ 1.75mΩ 340A 195A c Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating .