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AUIRFSL3206 - Power MOSFET

This page provides the datasheet information for the AUIRFSL3206, a member of the AUIRFS3206 Power MOSFET family.

Description

Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area.

Features

  • l l l l l l l l AUIRFS3206 AUIRFSL3206 HEXFET® Power MOSFET D Advanced Process Technology Ultra Low On-Resistance Enhanced dV/dT and dI/dT capability 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified.
  • G S D V(BR)DSS RDS(on) typ. max. ID (Silicon Limited) ID (Package Limited) D 60V 2.4m: 3.0m: 210A 120A c.

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AUTOMOTIVE GRADE PD - 96401A Features l l l l l l l l AUIRFS3206 AUIRFSL3206 HEXFET® Power MOSFET D Advanced Process Technology Ultra Low On-Resistance Enhanced dV/dT and dI/dT capability 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified * G S D V(BR)DSS RDS(on) typ. max. ID (Silicon Limited) ID (Package Limited) D 60V 2.4m: 3.0m: 210A 120A c Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating .
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