Download the AUIRFSL4310 datasheet PDF.
This datasheet also covers the AUIRFS4310 variant, as both devices belong to the same hexfet power mosfet family and are provided as variant models within a single manufacturer datasheet.
General Description
Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area.
Key Features
l l l l l l l
Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified.
HEXFET® Power MOSFET
D
V(BR)DSS
100V 5.6mΩ
130A c 75A
RDS(on) typ. G S
max. ID (Silicon Limited) ID (Package Limited)
7.0mΩ.
Note: The manufacturer provides a single datasheet file (AUIRFS4310_InternationalRectifier.pdf) that lists specifications for multiple related part numbers.
Full PDF Text Transcription for AUIRFSL4310 (Reference)
Note: Below is a high-fidelity text extraction (approx. 800 characters) for
AUIRFSL4310. For precise diagrams, and layout, please refer to the original PDF.
AUTOMOTIVE GRADE PD - 96324 www.DataSheet4U.com AUIRFS4310 AUIRFSL4310 Features l l l l l l l Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperat...
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ed Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified * HEXFET® Power MOSFET D V(BR)DSS 100V 5.6mΩ 130A c 75A RDS(on) typ. G S max. ID (Silicon Limited) ID (Package Limited) 7.0mΩ Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche ratin
AUIRFSL4310 Datasheet
