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AUIRFU4105Z - HEXFET Power MOSFET

Download the AUIRFU4105Z datasheet PDF. This datasheet also covers the AUIRFR4105Z variant, as both devices belong to the same hexfet power mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low onresistance per silicon area.

Key Features

  • AUIRFR4105Z AUIRFU4105Z 55V 24.5mΩ 30A Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified.
  • D V(BR)DSS RDS(on) max. ID G S.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (AUIRFR4105Z_InternationalRectifier.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
AUIRFU4105Z Power MOSFET Infineon
AUIRFU4292 Power MOSFET Infineon
AUIRFU120Z Power MOSFET Infineon
AUIRFU5305 Power MOSFET Infineon
AUIRFU540Z Power MOSFET Infineon

Other Datasheets by International Rectifier (now Infineon)

Part Number Description
AUIRFU4104 Power MOSFET
AUIRFU4292 Power MOSFET
AUIRFU4615 Power MOSFET
AUIRFU024N Power MOSFET
AUIRFU120Z Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
www.DataSheet4U.com PD - 97544 AUTOMOTIVE GRADE HEXFET® Power MOSFET Features ● ● ● ● ● ● ● AUIRFR4105Z AUIRFU4105Z 55V 24.5mΩ 30A Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified * D V(BR)DSS RDS(on) max. ID G S Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low onresistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating .