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AUTOMOTIVE GRADE
PD - 96351
Features
l Advanced Planar Technology l Low On-Resistance l P-Channel l Dynamic dV/dT Rating l 150°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Repetitive Avalanche Allowed up to Tjmax l Lead-Free, RoHS Compliant l Automotive Qualified *
D
AUIRFR9024N AUIRFU9024N
HEXFET® Power MOSFET
V(BR)DSS
-55V 0.175Ω
-11A
G S
RDS(on) max.
ID
Description
Specifically designed for Automotive applications, this Cellular design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low onresistance per silicon area.