Datasheet4U Logo Datasheet4U.com

AUIRG4BC30U-S - UltraFast Speed IGBT

Key Features

  • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode.
  • Industry standard D2Pak & TO-262 package.
  • Lead-Free, RoHS Compliant.
  • Automotive Qualified.
  • AUIRG4BC30U-S AUIRG4BC30U-SL UltraFast Speed IGBT C VCES = 600V G E n-channel VCE(on) typ. = 1.95V @VGE = 15V, IC = 12A Benefits.
  • Typical.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
AUIRG4BC30S-S INSULATED GATE BIPOLAR TRANSISTOR IRF
AUIRG4BC30S-SL INSULATED GATE BIPOLAR TRANSISTOR IRF
AUIRG4PC40S-E Insulated Gate Bipolar Transistor Infineon
AUIRGB4062D1 IGBT Infineon
AUIRGDC0250 IGBT Infineon

Other Datasheets by International Rectifier (now Infineon)

Part Number Description
AUIRG4BC30U-SL UltraFast Speed IGBT
AUIRG4PC40S-E Insulated Gate Bipolar Transistor
AUIRG4PH50S Standard Speed IGBT
AUIRG7CH80K6B-M AUTOMOTIVE GRADE
AUIRGB4062D1 INSULATED GATE BIPOLAR TRANSISTOR

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
AUTOMOTIVE GRADE PD - 96335 INSULATED GATE BIPOLAR TRANSISTOR Features • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Industry standard D2Pak & TO-262 package • Lead-Free, RoHS Compliant • Automotive Qualified * AUIRG4BC30U-S AUIRG4BC30U-SL UltraFast Speed IGBT C VCES = 600V G E n-channel VCE(on) typ. = 1.95V @VGE = 15V, IC = 12A Benefits • Typical Applications: SMPS, PFC D2Pak TO-262 AUIRG4BC30U-S AUIRG4BC30U-SL GC E Absolute Maximum Ratings Gate Collector Emitter Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device.