Datasheet4U Logo Datasheet4U.com

AUIRG4PC40S-E - Insulated Gate Bipolar Transistor

Key Features

  •  Standard: Optimized for minimum saturation voltage and low operating frequencies ( < 1kHz).
  •  Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3.
  •  Industry standard TO-247AD package.
  •  Lead-Free.
  •  Automotive Qualified.
  • C  G E n-channel  C AUIRG4PC40S-E VCES = 600V VCE(ON) typ. = 1.32V @ VGE = 15V, IC = 31A Benefits.
  •  Generation 4 IGBT's offer highest efficiency available.
  •  IGBT's optimized for specifi.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
AUIRG4PC40S-E Insulated Gate Bipolar Transistor Infineon
AUIRG4BC30S-S INSULATED GATE BIPOLAR TRANSISTOR IRF
AUIRG4BC30S-SL INSULATED GATE BIPOLAR TRANSISTOR IRF
AUIRGB4062D1 IGBT Infineon
AUIRGDC0250 IGBT Infineon

Other Datasheets by International Rectifier (now Infineon)

Part Number Description
AUIRG4PH50S Standard Speed IGBT
AUIRG4BC30U-S UltraFast Speed IGBT
AUIRG4BC30U-SL UltraFast Speed IGBT
AUIRG7CH80K6B-M AUTOMOTIVE GRADE
AUIRGB4062D1 INSULATED GATE BIPOLAR TRANSISTOR

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
  AUTOMOTIVE GRADE Insulated Gate Bipolar Transistor Features  Standard: Optimized for minimum saturation voltage and low operating frequencies ( < 1kHz)  Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3  Industry standard TO-247AD package  Lead-Free  Automotive Qualified* C  G E n-channel  C AUIRG4PC40S-E VCES = 600V VCE(ON) typ. = 1.